• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    PURPOSE: An edge ring for a rapid thermal process apparatus is provided to maintain uniformly temperature of a wafer by minimizing a contact area between the wafer and an edge ring. CONSTITUTION: An edge ring(100) includes the first upper side(110), the second upper side(120), and a rib(130). The first upper side(110) is formed on the inside of the edge ring(100). The second upper side(120) is formed on the outside of the edge ring(100). The first upper side(110) is lower than the second upper side(120). The first upper side(110) has an incline plane. The second upper side(120) is connected with the outside of the first upper side(110). The slip of a wafer is prevented by a sidewall for connecting the first upper side(110) with the second upper side(120). The rib(130) is formed at a lower portion of the edge ring(100).
    公开号:KR20030021211A
    申请号:KR1020030009463
    申请日:2003-02-14
    公开日:2003-03-12
    发明作者:남원식
    申请人:코닉 시스템 주식회사；
    IPC主号:
    专利说明:

    Edge Ring for Rapid Thermal Process Apparatus
    [4] BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an edge ring for a rapid heat treatment apparatus on which a wafer is seated, and more particularly, to an edge ring for a rapid heat treatment apparatus capable of minimizing the contact area between the wafer and the edge ring and providing an optimal temperature measurement environment. .
    [5] The fabrication of high-performance semiconductor devices, the yield improvement of devices that can be secured per unit time, and the continuous reproducibility of the processes are common to all equipments in which semiconductor processing is performed. The uniformity of wafers in processes requiring wafer heating One heat treatment is required.
    [6] Representative examples of equipment for heat treatment of wafers include Rapid Thermal Process (RTP) equipment, and Rapid Thermal Treatment (Rapid Thermal Annealing), Rapid Thermal Cleaning, Rapid Thermal Chemical Deposition (Rapid Thermal Chemical). Vapor Deposition, Rapid Thermal Oxidation, and Rapid Thermal Nitridation.
    [7] In the rapid heat treatment apparatus, since the temperature rise and temperature decrease of the wafer are performed in a wide temperature range in a very short time, precise temperature control is essential. In order to perform the heat treatment process while maintaining the temperature distribution of the wafer uniformly, it is very important to maintain the same thermal characteristics at all points of the wafer. In particular, the contact point between the wafer and the fixing device of the wafer is different from the thermal properties, which interferes with maintaining a uniform temperature distribution. Therefore, the wafer holding device that supports only the edge, that is, the edge ring, is used to minimize the phenomenon.
    [8] The function of the edge ring is to firstly prevent defects caused by the temperature difference between the supporting portions when supporting the inside of the wafer by supporting the edge of the wafer. Third, when measuring the temperature of the wafer from the radiant energy of the wafer, and to prevent energy other than the radiant energy emitted from the wafer into the measuring unit, and fourth, rotate to maintain a more uniform temperature of the wafer In this case, the position of the wafer is fixed so that a stable process can be performed.
    [9] FIG. 1A is a schematic view for explaining a conventional rapid heat treatment apparatus, and FIG. 1B is a schematic view showing a shape in which a wafer is seated on a conventional edge ring in the rapid heat treatment apparatus according to FIG. 1A.
    [10] Referring to FIG. 1A, the rapid heat treatment apparatus includes a quartz window 10, a heat source device 20, an edge ring support 30, an edge ring 40, a pyrometer 50, and the like.
    [11] The tungsten-halogen lamp is mainly used as the heat source device 20, and the wafer is heated by infrared rays emitted from the tungsten-halogen lamp. The quartz window 10 separates the wafer from the atmosphere to maintain a constant atmosphere during the rapid heat treatment process, protects the wafer from contaminants such as dust in the atmosphere, and transmits infrared rays emitted from the heat source device 20. It plays a role. The pyrometer 50 is used at the back side of the wafer to quickly measure the temperature of the wafer in a non-contact manner. The state of the wafer, that is, the emissivity according to the temperature, the geometrical characteristics of the chamber, and the pyrometer 50 It works very sensitively by its spectral wavelength, the type and thickness of the thin film formed on the wafer.
    [12] The edge ring 40 is a place where the wafer is seated, and is installed on the edge ring support 30, and is made of Si, SiC, and the like, which have similar thermal characteristics to the Si wafer. At this time, the edge ring 40 should be installed so as to prevent thermal non-uniformity generated at the wafer edge portion and the infrared radiation emitted from the heat source device 20 does not directly reach the pyrometer 50.
    [13] Referring to FIG. 1B, a flat edge ring 40 such as (1) and (2) of FIG. 1B or a stepped edge ring 40 such as (3), (4) and (5) of FIG. The wafer is seated on the surface. At this time, in the case of (1) of FIG. 1B, since the edge ring 40 supports the inside of the wafer, defects occur in the wafer due to the temperature difference between the supporting parts, and in the case of (2) of FIG. The position of the wafer can not be fixed. In addition, while the stepped structure as shown in (3) to (5) of FIG. 1B prevents sliding due to the structure as shown in (2) of FIG. 1B, in the case of (3) of FIG. Since the 40 contacts in a line and the frictional area becomes smaller when the wafer is rotated, slippage occurs. In the case of FIGS. 1B and 4, the contact area between the wafer and the edge ring 40 is wide, resulting in poor temperature uniformity. There is a problem.
    [14] Accordingly, an object of the present invention is to minimize the contact area between the wafer and the edge ring during the rapid heat treatment process of the wafer, to maintain the uniformity of the temperature of the wafer, and to prevent the wafer from leaving during the process. An edge ring for rapid heat treatment apparatus is provided.
    [1] 1A is a schematic view for explaining a conventional rapid heat treatment apparatus;
    [2] 1B is a schematic view showing a shape in which a wafer is seated on a conventional edge ring; And
    [3] 2A and 2B are views for explaining an edge ring for a rapid heat treatment apparatus according to an embodiment of the present invention.
    [15] According to the present invention for achieving the above technical problem, the edge ring for a rapid heat treatment apparatus is located in the lower portion of the heat source device, the wafer is seated on its upper surface: the inner first upper surface 110 is the outer second upper surface 120 It has two top surfaces with steps so as to be positioned lower than), the first top surface 110 is characterized in that the inclined surface inclined upward from the inside to make a line contact with the wafer when the wafer is seated.
    [16] Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings.
    [17] FIG. 2A is a perspective view illustrating an edge ring for a rapid heat treatment apparatus according to an exemplary embodiment of the present invention, and FIG. 2B is a cross-sectional view taken along the line A-A 'of the wafer seated on the edge ring of FIG. 2A. Drawing.
    [18] 2A and 2B, in the edge ring 100 for a rapid heat treatment apparatus according to the present exemplary embodiment, two steps with a step such that an inner first upper surface 110 is located lower than an outer second upper surface 120 are provided. There is an upper surface of the dog.
    [19] The first upper surface 110 is formed of an inclined surface that is inclined upward from the inside to make line contact with the wafer when the wafer is seated. In this way, by making the contact portion with the wafer an inclined surface, the outermost edge of the wafer and the edge ring 100 are in line contact. Therefore, defects caused by the temperature difference due to the contact between the edge ring 100 and the wafer can be prevented to the maximum.
    [20] The second upper surface 120 is connected to the outside of the first upper surface 110. Therefore, even when the wafer is rotated for heat treatment, separation of the wafer is prevented by sidewalls connecting the first top surface 110 and the second top surface 120.
    [21] On the other hand, the lower surface of the conventional edge ring 40 has a planar shape, and the mounting of the edge ring 40 with respect to the edge ring support 30 is performed using a pin or the like. Therefore, since it is fixed by the inconvenience of the edge ring mounting, the increase in the cost of the heat treatment process and the fin, etc., there is a problem of breakage or permanent deformation of the edge ring generated when the edge ring expands at elevated temperatures.
    [22] In order to solve this problem, the lower surface of the edge ring 100 according to the present embodiment, a cylindrical rib (protruding downward) to be inserted into a groove provided in the edge ring support 30 for inserting a conventional pin or the like ( 130 is formed. At this time, in order to ensure the ease of contact with the edge ring support 30 and excellent contactability, the lower surface of the rib 130 in contact with the edge ring support 30 is preferably curved. In this way, the rib ring 130 that can be inserted into the edge ring support 30 is formed on the bottom surface of the edge ring 100 so that the attachment of the edge ring is easy. In addition, not only the expansion of the edge ring 100 due to the elevated temperature is suppressed by the rib 130 fixed to the edge ring support 30, but the original ring is restored by the elastic force of the rib 130 even when inflated. . In this case, by installing the pyrometer 50 to be located inside the rib 130, the infrared rays emitted from the heat source device 20 are prevented from entering the space where the temperature measuring device 50 is installed, so that accurate temperature measurement is achieved. Even more possible.
    [23] Therefore, unlike the edge rings which are in line contact with the conventional wafer, the line contact is made at the outermost edge of the wafer, the separation of the wafer is prevented, and further, accurate temperature measurement is possible.
    [24] On the other hand, since the rib is provided in the edge ring according to an embodiment of the present invention, the edge ring may be directly attached to the chamber without a support.
    [25] As described above, according to the edge ring for the rapid heat treatment apparatus of the present invention, as the wafer and the edge ring are in linear contact during the rapid heat treatment process, the contact area is minimized, thereby achieving a uniform temperature distribution over the entire surface of the wafer.
    [26] Furthermore, there is a step in the upper portion of the edge ring can provide a sense of stability even during the rotation of the wafer.
    [27] Furthermore, by providing a rib at the bottom, it can be directly mounted to the chamber without a support, the edge ring can be easily mounted to the support, and accurate temperature measurement is further possible.
    [28] The present invention is not limited to the above embodiments, and it is apparent that many modifications are possible by those skilled in the art within the technical spirit of the present invention.
    权利要求:
    Claims (3)
    [1" claim-type="Currently amended] In the edge ring for a rapid heat treatment device which is located under the heat source device 20 and the wafer is seated on its upper surface,
    The inner first upper surface 110 has two upper surfaces with steps so that the lower upper surface 110 is positioned lower than the outer second upper surface 120, and the first upper surface 110 is in line contact with the wafer when the wafer is seated. Edge ring for a rapid heat treatment apparatus, characterized in that the inclined surface inclined upward from the inner side to the outside.
    [2" claim-type="Currently amended] The edge ring of claim 1, wherein a cylindrical rib (130) is further formed to protrude downward from a lower surface of the edge ring.
    [3" claim-type="Currently amended] 3. The edge ring of claim 2, wherein the edge ring is installed by a combination of the support 30 and the rib 130 provided separately, and the lower end of the rib contacting the support is a curved surface. .
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    同族专利:
    公开号 | 公开日
    KR100387728B1|2003-06-18|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    2003-02-14|Application filed by 코닉 시스템 주식회사
    2003-02-14|Priority to KR10-2003-0009463A
    2003-03-12|Publication of KR20030021211A
    2003-06-18|Application granted
    2003-06-18|Publication of KR100387728B1
    优先权:
    申请号 | 申请日 | 专利标题
    KR10-2003-0009463A|KR100387728B1|2003-02-14|2003-02-14|Edge Ring for Rapid Thermal Process Apparatus|
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